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Listing of works with the partition by the subject of reports. Click on the work title to see its details. The selected set may be restricted by specifying a range of conference years, or by selecting a specific topic.

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ADC design problems
Cellular automata
Design of System-on-chip (SoC) and IP-blocks
Design of VLSI elements
Design of VLSI signal processors
Design of analog and mixed functional blocks of VLSI
Design of digital functional blocks of VLSI
Design of fault-tolerance systems
Design of micro-electromechanical systems
Design of nanoelectronic devices
Design of nanoelectronic devices based on Josephson junctions
Design of photodetecting VLSI
Design of radiation-resistant VLSI
Design of technological processes
Designing components for aerospace and navigation technology
Genetic algorithms in VLSI CAD
Methods and algorithms for automated layout design
Methods for high-level simulation
Methods of device technology simulation of VLSI
Methods of digital information processing and digital filters
Methods of electro-thermal simulation
Methods of logic synthesis and functional logic simulation ...
Methods of simulation of VLSI electrical characteristics
Models of devices for circuit simulation
Problems of development of sensory microcircuitry
Simulation of data transfer channels
Study of the magnetic properties of materials
Unconventional computing systems
design of memory cells
Selection on topic: Methods of device technology simulation of VLSI
Selected papers: from 2005 to 2018 year
In selection - 57 papers
Accuracy and adequacy of the analytical modeling of the temperature distribution in thermal microsystems
Analysis of the effect of membrane shape at mechanical strength and parameter stability of MEMS pressure sensors
Design Principles and Numerical Simulation of Microthermomechanical IR Imagers with Optical Readout
Design of IC package with ceramic substrate for multicore processor
Development and modeling for submicron PDCFET transistors
Development of an optimum design of a magnetic field sensor on the basis of lateral magnetic transistor using tools of device technological simulation
Development of methods for the analysis of defects in the gate dielectric on the test structures in the wafers
Device-technological and circuit models of BiCMOS transistors, made on silicon-germanium technology
Device-technological simulation of SiGe bipolar and MOS transistor VLSI structures
0.5 um SOI CMOS for Extreme Temperature Applications
Calibration of numerical TCAD model for 180 nm SOI MOSFETs
Carbon nanostructures plasma-catalytic growth technology: features and field emission circuits’ application
Criteria of a choice of models at calculation of device characteristics of submicronic transistor structures
End-to-end technology/device/circuit/system statistical design
Features of the design of devices based on AlGaN/GaN heterostructures in technology computer aided design
I-V Characteristics Calculation Model of SiC Based Nanoscale Mosfet With Deep Impurities and Trap Levels
Impact of ionizing radiation on GaN HEMTs
Influence of CMOS Hall Effect Sensor Layout on its Magnetic Sensitivity
Investigation and optimization of technological parameters of formation of the logical structure of the cells on "Silicon on Insulator"
Investigation of depencencies of high voltage SOI-MOSFETs safe operating area on structual and process-dependent parameters
Investigation of single event upset reliability for SOI CMOS SRAM cells using mixed-mode 3D TCAD-SPICE simulation
Investigation of the influence dispersion of technological parameters of VLSI on resistance to TID effects by device-technological simulation
Mathematical modelling of temperature distribution in thermal microsensors
Mathematical simulation of electromigratory faulures of interlayer connection of VLSI
Membrane-based thermal flow sensor working on calorimetric principle
Methods electromigration analysis conducting lines using the accelerated measurement test structures located in the wafer
Modeling of plasma-chemical etching technology in CF4/H2 mixture
Modeling of plasma-chemical etching technology in RF discharge
Numerical model for MISFETs characterization
Numerical model of semiconductors with crystal heating
Numerical simulation of solar radiation transmittance for textured surface silicon photovoltaic cells
One dimensional process and device simulation using spreadsheets
Optimization of technological regimes of manufacturing a bipolar heterotransistors
Optimization of the breakdown voltage in IGBT structure on the base of its constructive and technology parameters
Parameters extraction of the scaled MOS-transistor model
Photosensitive CCD VLSI TCAD modeling
Physical and Topological Simulation of Photodetectors for AIIIBV Integrated Optical Commutation Systems Taking into Account Dependence of Charge Carriers Mobilities on Electric Field
Problems of using device-technological simulation as tool of designing and ways of their solution
Process and device simulation of CMOS SOI VLSI elements with an account for radiation effects
Prospects of using SiGe BiCMOS technology for creation of the SHF circuits
Research of fully CMOS compatible EEPROM cell
Research of influence of constructive-technology factors on sensitivity of magnetic transistor with methods of device-technological simulation
Research of the RF performance of SiGe HBT during transition towards sub-100 nm technology limits
Results of technological and devices modeling of the complementary bipolar technology with 10 GHz cutoff frequency and over
SPICE models of optoelectronic elements for simulation of photosensitive PD-CMOS VLSI
Si BJT and SiGe HBT TCAD simulation taking into account radiation effects
Simulation of MEMS Technology Based Thermoelectric Generators
Simulation of SEU failures in submicronic SoS CMOS cells of memory in view of temperature effects
Simulation of processes of equilibrium and fast heat treatments at formation of the active areas of submicronic and nanomicronic ICs
Simulation of transistor structures of power electronics
Software package for Technology Computer-Aided Design of spintronic devices based on magnetic tunneling junctions
TCAD-model of CCD image sensor with vertical antiblooming
TCAD simulation of nanometer MOSFET on the assumption of the surface roughness at Si/SiO2 interface
The analysis of dynamic processes of interference distribution in substrates of integrated elements with methods of device-technological simulation
The method for CMOS APS light-voltage characteristics technological-device modeling
The process flow simulation of the cathode-grid system and its emission properties
Using TCAD in designing the planar powerful MOS-transistors having the raised breaking-down voltage in the off-state

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