Listing of all the works of the author. Click on the work title to get the full information.
| 2005 | |
| |  | Petrosyants K.O., Ryabov N.I., Kazakov V.I., Makeev V.V., Rusakov D.N., Chirkin G.K.
Simulation of transistor structures of power electronics |
| | | Chernyj A.I., Bogatyrev V.N., Povarnitsyna Z.M., Petrosyants K.O., Kharitonov I.A., Karelin A.A.
Design and development of SOI CMOS OA |
| 2006 | |
| | | Petrosyants K.O., Kozynko P.A.
Enhancing subsystem for thermal simulation of PCB in Mentor Graphics EDA |
| | | Petrosyants K.O., Shirabajkin D.B.
Mathematical simulation of electromigratory faulures of interlayer connection of VLSI |
| | | Petrosyants K.O., Torgovnikov R.A.
The comparative analysis of circuit simulation models of SiGe heterojunction transistor |
| 2008 | |
| | | Petrosyants K.O., Ryabov N.I., Kharitonov I.A., Kozynko P.A.
Electro-thermal simulation process implementation in Mentor Graphics IC Station |
| | | Kharitonov I.A., Petrosyants K.O., Orekhov E.V., Yatmanov A.P., Sambursky L.M.
Process and device simulation of CMOS SOI VLSI elements with an account for radiation effects |
| | | Petrosyants K.O.
Thermal simulation of MES components: from submicronic VLSI elements up to complex electronic blocks |
| | | Petrosyants K.O., Torgovnikov R.A.
Features of simulation of SiGe:C heterojunction bipolar transistor |
| 2010 | |
| | | Petrosyants K.O., Ryabov N.I.
Temperature sensors modeling for smart power ICs |
| 2012 | |
| | | Petrosyants K.O., Kharitonov I.A., Orekhov E.V., Sambursky L.M., Yatmanov A.P., Voevodin A.V.
Investigation of single event upset reliability for SOI CMOS SRAM cells using mixed-mode 3D TCAD-SPICE simulation |
| | | Gryaznov E.G., Mansurov A.N., Petrosyants K.O.
Radiation hardened EEPROM structures integrated with SOI CMOS techology |
| | | Petrosyants K.O., Kharitonov I.A., Adonin A.S., Sidorov A.V., Aleksandrov A.V.
Digital circuit IBIS-models generation with account for temperature and radiation |
| 2016 | |
| | | Petrosyants K.O., Kozhukhov M.V.
Si BJT and SiGe HBT TCAD simulation taking into account radiation effects |
| 2018 | |
| | | Petrosyants K.O., Ismail-zade M.R., Sambursky L.M., Kharitonov I.A.
SPICE-Models of Field-Effect Transistors with MOSFET and JFET Structures in the Temperature Range down to –200°C |
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