2005  
  Pugachev A.A. Numerical Simulation of Photosensitive VLSI Pixels 
2006  
  Budyakov A.S., Prokopenko N.N., Starchenko E.I., Savchenko Ye.M., Krutchinsky S.G. Experience in design and modeling of analog circuits with limited parameters based on Russian bipolar technology 
  Prokopenko N.N., Budyakov A.S., Kovbasyuk N.V., Krutchinsky S.G., Savchenko Ye.M. Methods of compensation of basic components of the output capacitance of transistors in analog chips 
  Pugachev A.A., Osochkin S.S. Physicaltopological model of modulation transfer fuction 
  Prokopenko N.N., Budyakov A.S., Savchenko Ye.M., Korneev S.V. The dynamic extreme parameters of operational amplifiers with voltage feedback and amplifiers with current feedback in linear and nonlinear modes 
2008  
  Savchenko Ye.M. Broadband integrated SHF doubler of frequency 
  Prokopenko N.N., Budyakov A.S., Savchenko Ye.M. Operational amplifiers with generalized current feedback 
  Pugachev A.A., Maklakova O.V., Kushnir A.A. Photosensitive CCD VLSI TCAD modeling 
  Andreev P.P., Pugachev A.A., Khodosh L.S. The project of the onchip processor for videostream processing are developed. This project are based on Russian SIMD processor PARS 
2010  
  Budyakov A.S., Savchenko Ye.M., Pronin A.A., Kozynko P.A. A 1W, 800 MHz RF Monolithic Integrated Circuit Power Amplifier Based on Silicon Technology 
  Prokopenko N.N., Budyakov P.S., Serebryakov A.I. Architecture of the microwave differential operating amplifiers with paraphase output 
  Pugachev A.A., Stempkovsky A.L. CMOSAPS element with high chargecollection efficiency 
  Prokopenko N.N., Serebryakov A.I., Budyakov P.S. Method of Improving the Stability of Zero Analog Circuits with HighImpedance Node in the Conditions of Temperature and Radiation Effects 
  Drozdov D.G., Savchenko Ye.M., Zubkov A.M. Results of technological and devices modeling of the complementary bipolar technology with 10 GHz cutoff frequency and over 
2012  
  Prokopenko N.N., Budyakov P.S., Serebryakov A.I. Autonomous parameters of of transistors of uncommited logic array ABMK_1_3 in radiation and temperature influences 
  Budyakov P.S., Budyakov A.S., Prokopenko N.N. Comparative analysis of active mmwave SiGe mixers 
  Drozdov D.G., Savchenko Ye.M., Siomko V.O. Features of the design of devices based on AlGaN/GaN heterostructures in technology computer aided design 
  Prokopenko N.N., Budyakov P.S., Pakhomov I.V. Methods to improve the gain of the classical stages on bipolar transistors at low supply voltage 
  Kostukov E.V., Pospelova M.A., Pugachev A.A. TCADmodel of CCD image sensor with vertical antiblooming 
2014  
  Drozdov D.G., Savchenko Ye.M. Design of technology process of silicongermanium heterobipolar transistors manufacture 
  Pugachev A.A., Ivanova G.A. The method for photosensitive matrix VLSI modulation transfer function simulation 
2016  
  Kononov A., Pugachev A.A. The method for CMOS APS lightvoltage characteristics technologicaldevice modeling 
2018  
  Dvornikov O.V., Tchekhovski V.A., Diatlov V.L., Prokopenko N.N., Budyakov P.S. Design of Voltage Comparators Based on the Elements of the RadiationHardened LowTemperature BiJFET Array Chip MH2XA030 
  Pugachev A.A., Ivanova G.A. Modulation Transfer Function Model for Photosensitive VLSI Under One Single Impact Particle Event 
