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The comparative analysis of circuit simulation models of SiGe heterojunction transistor

Authors
 Petrosyants K.O.
 Torgovnikov R.A.
Date of publication
 2006

Abstract
 In paper the review of modern models of the bipolar transistor is given and the analysis of these models with the purpose of a choice optimum for modelling SiGe transistor and calculation of ultrafast circuits on their basis is peformed.
Keywords
 circuit simulation models of SiGe heterojunction transistor
Library reference
 Petrosyants K.O., Torgovnikov R.A. The comparative analysis of circuit simulation models of SiGe heterojunction transistor // Problems of Perspective Microelectronic Systems Development - 2006. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2006. P. 184-190.
URL of paper
 http://www.mes-conference.ru/data/year2006/33.pdf

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