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The Utilization of Photolayers for Bipolar Transistors Implementation in Typical CMOS Process

Authors
 Adamov Yu.F.
 Gorshkova N.M.
 Krupkina T.Yu.
Date of publication
 2006

Abstract
 The possibilities of creation of bipolar transistors in typical CMOS process with additional N-type optical layers are considered in the paper. The possibility of transistors implementation with in satisfactory parameters, based on the modeling results is shown. Simulated and measured characteristics of several structural types of npn transistors are obtained. Emitter width dependence of transistor gain are achieved.
Keywords
 Bipolar transistor, CMOS process, doping profile, optical layer
Library reference
 Adamov Yu.F., Gorshkova N.M., Krupkina T.Yu. The Utilization of Photolayers for Bipolar Transistors Implementation in Typical CMOS Process // Problems of Perspective Microelectronic Systems Development - 2006. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2006. P. 421-425.
URL of paper
 http://www.mes-conference.ru/data/year2006/77.pdf

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