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Physical-topological model of modulation transfer fuction

Authors
 Pugachev A.A.
 Osochkin S.S.
Date of publication
 2006

Abstract
 The formulation of new two-dimensional physical-topological model of photosensitive VLSI modulation transfer function (MTF) are involved. This model aimed for MTF analysis with two- and- three-dimensional photosensitive pixel electrical effects consideration.
Keywords
 Electron device model, photosensitive VLSI, CMOS, CCD, pixel, verification, optimization
Library reference
 Pugachev A.A., Osochkin S.S. Physical-topological model of modulation transfer fuction // Problems of Perspective Microelectronic Systems Development - 2006. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2006. P. 426-432.
URL of paper
 http://www.mes-conference.ru/data/year2006/78.pdf

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