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Standard cell characterezition methodoligy with respect MOSFET threshold voltage variation

Authors
 Kagramanyan E.R.
 Gavrilov S.V.
 Egorov Yu.B.
Date of publication
 2008

Abstract
 In the article standard digital CMOS gate model for timing analysis of IC reliability aware threshold voltage degradation (due to NBTIĖeffect)is proposed. For models characterization it is used the method of delay and transition quadratic approximation. Results of experiments allows to conclude about efficiency of proposed methods.
Keywords
 Variation, Negative Bias Temperature Instability (NBTI), quadratic approximation
Library reference
 Kagramanyan E.R., Gavrilov S.V., Egorov Yu.B. Standard cell characterezition methodoligy with respect MOSFET threshold voltage variation // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2008. P. 102-107.
URL of paper
 http://www.mes-conference.ru/data/year2008/15.pdf

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