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Investigation and optimization of technological parameters of formation of the logical structure of the cells on "Silicon on Insulator"

Authors
 Dolgij L.N.
 Efremov V.A.
 Nelayev V.V.
 Stempitski V.R.
Date of publication
 2008

Abstract
 The results of physical modeling of SOI technology and logic CMOS cell was presented. Optimization of technological parameters of manufacturing process of a CMOS cell was performed using the response surface methodology.
Keywords
 SOI structure, physical modeling, process optimization, response surface methodology
Library reference
 Dolgij L.N., Efremov V.A., Nelayev V.V., Stempitski V.R. Investigation and optimization of technological parameters of formation of the logical structure of the cells on "Silicon on Insulator" // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2008. P. 169-172.
URL of paper
 http://www.mes-conference.ru/data/year2008/28.pdf

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