Home         Authors   Papers   Year of conference   Themes   Organizations        To MES conference

Research of influence of constructive-technology factors on sensitivity of magnetic transistor with methods of device-technological simulation

Authors
 Kozlov A.V.
 Tikhonov R.D.
 Parmenov Yu.A.
Date of publication
 2008

Abstract
 By means of system of device-technological simulation ISE TCAD it is carried out research of influence of structurally-technology factors and an operating mode of two-collector bipolar magnetic transistor on its relative current sensitivity.
Keywords
 magnetic transistor, device-technological simulation
Library reference
 Kozlov A.V., Tikhonov R.D., Parmenov Yu.A. Research of influence of constructive-technology factors on sensitivity of magnetic transistor with methods of device-technological simulation // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2008. P. 183-188.
URL of paper
 http://www.mes-conference.ru/data/year2008/31.pdf

Copyright © 2009-2018 IPPM RAS. All Rights Reserved.

Design of site: IPPM RAS