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Process and device simulation of CMOS SOI VLSI elements with an account for radiation effects

Authors
 Kharitonov I.A.
 Petrosyants K.O.
 Orekhov E.V.
 Yatmanov A.P.
 Sambursky L.M.
Date of publication
 2008

Abstract
 Enhancement of ISE TCAD system developed to expand its opportunities regarding radiation effects on CMOS SOI structures is described. The technique of ISE TCAD simulation of the effects of the total dose, the pulse irradiation, single heavy particles on CMOS SOI structures is worked out. Examples of simulation of the total dose effects and single particles impact on CMOS SOI VLSI elements are presented.
Keywords
 process and device simulation, CMOS SOI VLSI, radiation effects
Library reference
 Kharitonov I.A., Petrosyants K.O., Orekhov E.V., Yatmanov A.P., Sambursky L.M. Process and device simulation of CMOS SOI VLSI elements with an account for radiation effects // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2008. P. 266-271.
URL of paper
 http://www.mes-conference.ru/data/year2008/48.pdf

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