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Application of a technique of not destroying control of dose stability of parties SoS CMOS VLSI

Authors
 Davydov G.G.
 Sogoyan A.V.
 Petrov A.G.
 Artamonov A.S.
 Yashanin I.B.
 Skobelev A.V.
 Sedakov A.Yu.
Date of publication
 2008

Abstract
 Methods of application of a technique of not destroying control of SoS CMOS VLSI stability to dose impacts are considered. Efficiency of inspection of packaged VLSI, and also chips before its packaging is shown. Insertion in a technological route of manufacturing of operation of radiating inspection has allowed to optimize parameters of technological process with the purpose of increase dose stability of VLSI.
Keywords
 techniquee of non-destroying control, Si-on-Sapphire CMOS VLSI
Library reference
 Davydov G.G., Sogoyan A.V., Petrov A.G., Artamonov A.S., Yashanin I.B., Skobelev A.V., Sedakov A.Yu. Application of a technique of not destroying control of dose stability of parties SoS CMOS VLSI // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2008. P. 280-285.
URL of paper
 http://www.mes-conference.ru/data/year2008/51.pdf

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