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Numerical Simulation of Photosensitive VLSI Pixels

Authors
 Pugachev A.A.
Date of publication
 2005

Abstract
 The classification of solid-state electron device models on a basis of its computation process organization structure complications are described. The greatest parts of numerical simulation methodology of photosensitive VLSI pixels are the planning of simulation procedure and numerical modeling results verification procedure. To design the optimal simulation methodology leads to obtain the accurate data for practical design of photosensitive pixels. This paper also gives examples of optimized CCD pixel design using special methodology of simulation.
Keywords
 Electron device model, photosensitive VLSI, pixel, verification, CCD, optimization
Library reference
 Pugachev A.A. Numerical Simulation of Photosensitive VLSI Pixels // Problems of Perspective Microelectronic Systems Development - 2005. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2005. P. 165-172.
URL of paper
 http://www.mes-conference.ru/data/year2005/24.doc

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