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The analysis of operability submicronic RAM CMOS VLSI at extreme thermal modes

Authors
 Krasnyuk A.A.
 Stenin V.Ya.
 Cherkasov I.G.
 Yakovlev A.V.
Date of publication
 2008

Abstract
 Simulation and experimental research of thermal change of CMOS cell characteristics of memory submicronic CMOS RAM in a wide range of temperatures from -50 up to +150 have shown, that VLSI with submicronic design norms on the basis of volumetric CMOS with epitaxial layers 0,35 microns and industrial volumetric CMOS 0,18 microns of technological processes as a whole provide high maximum permissible thermal modes of operation.
Keywords
 submicronic RAM CMOS VLSI, extreme thermal modes
Library reference
 Krasnyuk A.A., Stenin V.Ya., Cherkasov I.G., Yakovlev A.V. The analysis of operability submicronic RAM CMOS VLSI at extreme thermal modes // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2008. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2008. P. 447-452.
URL of paper
 http://www.mes-conference.ru/data/year2008/84.pdf

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