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Method and means of built-in self-testing of memory chip

Authors
 Andrienko V.A.
 Ryabtsev V.G.
 Utkina T.Yu.
Date of publication
 2010

Abstract
 The method and built-in self-testing means are offered that ensure receiving of all possible combinations of data codes, kept in contiguous cells, circumferential base cells, what is led to exposure of refuses, caused the cross-effect of memory cells.
Keywords
 Walsh functions, memory chip, self-testing means.
Library reference
 Andrienko V.A., Ryabtsev V.G., Utkina T.Yu. Method and means of built-in self-testing of memory chip // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 386-389.
URL of paper
 http://www.mes-conference.ru/data/year2010/papers/m10-37-52131.pdf

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