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Modeling of the charge gathering from the heavy charged particles influence in CMOS integrated circuit

Authors
 Zolnikov V.K.
 Potapov I.P.
 Tapero K.I.
Date of publication
 2010

Abstract
 The article considers problems of the heavy charged particle effects modeling in a CMOS-structure of integrated circuit. Numerical formulas of the charge from the heavy charged particle influence calculation in sensitive elements of GSI are resulted. The offered technique allows calculating for a preset value of linear losses of energy of falling particles the impulse form of ionizing current and dependence of the collected charge fromtime after particle hit.
Keywords
 designing; radiation; heavy charged particles; stability; CMOS; ; integrated circuit.
Library reference
 Zolnikov V.K., Potapov I.P., Tapero K.I. Modeling of the charge gathering from the heavy charged particles influence in CMOS integrated circuit // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 275-278.
URL of paper
 http://www.mes-conference.ru/data/year2010/papers/m10-83-12571.pdf

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