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Dynamic model for memory cell on tunnel magnetoresistance effect

Authors
 Kostrov A.I.
 Danilyuk A.L.
 Stempitski V.R.
 Borisenko V.E.
Date of publication
 2010

Abstract
 The dynamic behavioral model of a spin memory cell on tunnel magnetoresistance effect is developed. The model realizes single-domain magnetic hysteresis and timing characteristics on the basis of the Landau-Lifshits-Gilbert equation. Model application is shown for spin memory cell of a new generation MRAM in quality of silicon. Transient and current-voltage characteristics of memory cell for various values of a thickness tunnel dielectric are presented, dynamics of magnetization angle a free ferromagnetic in dependence of a current in write lines is shown. The value of a tunnel magnitoresistance, delay of states switching and maximum working frequency are calculated.
Keywords
 Magnetoresistance memory, spintronics, magnetic tunnel junction, device modeling, equivalent circuit
Library reference
 Kostrov A.I., Danilyuk A.L., Stempitski V.R., Borisenko V.E. Dynamic model for memory cell on tunnel magnetoresistance effect // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 144-149.
URL of paper
 http://www.mes-conference.ru/data/year2010/papers/m10-181-92851.pdf

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