Home         Authors   Papers   Year of conference   Themes   Organizations        To MES conference

Results of technological and devices modeling of the complementary bipolar technology with 10 GHz cutoff frequency and over

Authors
 Drozdov D.G.
 Savchenko Ye.M.
 Zubkov A.M.
Date of publication
 2010

Abstract
 In article presented results of technological and devices modeling of the complementary
bipolar technology providing cutoff frequency of transistors of 10 GHz are considered and
breakdown voltage Uce=12 V, includes use of two layers polysilicon, technology of self-aligned, and also the combined isolation of elements integrated circuit. Modeling is realized by means of complex program Sentaurus TCAD of company Synopsys.
Keywords
 IC, npn- and pnp-transistors, cutoff frequency, TCAD.
Library reference
 Drozdov D.G., Savchenko Ye.M., Zubkov A.M. Results of technological and devices modeling of the complementary bipolar technology with 10 GHz cutoff frequency and over // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 66-69.
URL of paper
 http://www.mes-conference.ru/data/year2010/papers/m10-216-85882.pdf

Copyright © 2009-2019 IPPM RAS. All Rights Reserved.

Design of site: IPPM RAS