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Technology migration of CMOS band gap voltage reference

Authors
 Makarov A.B.
 Kochkin I.P.
Date of publication
 2010

Abstract
 Technology migration of well known CMOS band gap voltage reference is analyzed.
Impact of such factors as resistorís temperature coefficient, bipolar diodeís parasitic devises, OPAMP offset voltage are estimated. Method of first order temperature correction is investigated. The rules and algorithm of migration are proposed.
Keywords
 technology migration, CMOS, voltage reference, temperature correction.
Library reference
 Makarov A.B., Kochkin I.P. Technology migration of CMOS band gap voltage reference // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 547-552.
URL of paper
 http://www.mes-conference.ru/data/year2010/papers/m10-140-24651.pdf

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