Home         Authors   Papers   Year of conference   Themes   Organizations        To MES conference

Dual-beam technology application for phase change nonvolatile RAM array prototyping

Authors
 Anufriev Yu.V.
 Zenova E.V.
 Kondratjev P.K.
 Balashov D.S.
 Salnikov S.M.
Date of publication
 2010

Abstract
 possible fabrication technique of phase change nonvolatile RAM array prototype is described. Dual-beam research system NOVA 600 NanoLab application as main processing equipment was considered. Path flow and flow features applied in this paper are expounded.
Keywords
 nonvolatile nanoscale memory, Phase RAM, Dual-beam, FEI.
Library reference
 Anufriev Yu.V., Zenova E.V., Kondratjev P.K., Balashov D.S., Salnikov S.M. Dual-beam technology application for phase change nonvolatile RAM array prototyping // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2010. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2010. P. 658-661.
URL of paper
 http://www.mes-conference.ru/data/year2010/papers/m10-356-17292.pdf

Copyright © 2009-2019 IPPM RAS. All Rights Reserved.

Design of site: IPPM RAS