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Physical and chemical model of memory and switching effects in thin-film CdSe1-xTex elements

Authors
 Jafarov M.A.
 Nasirov E.F.
Date of publication
 2012

Abstract
 The effects of switching and memory produced by chemical vapor deposition films CdSe1-xTex (0 <= x <= 0.5), on aluminum substrates, thickness of 0,6 ... 1,2 mm. It is shown that the transition of thin-film elements in a metastable state with quasimetallic type conductivity is accompanied by structural transformations in which the redistribution of atoms of different valence on lattice sites in the structure there is the charge ordering of electron density.
Keywords
 effects of switching and memory, chemical vapor deposition
Library reference
 Jafarov M.A., Nasirov E.F. Physical and chemical model of memory and switching effects in thin-film CdSe1-xTex elements // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2012. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2012. P. 653-656.
URL of paper
 http://www.mes-conference.ru/data/year2012/pdf/D22.pdf

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