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Nanometer merged MOS devices modeling

 Rakitin V.V.
Date of publication

 This article considers a new type of nanometer-sized devices with a merged MOS transistor (MMOS).
The design and mode are described. The simulation MMOS with minimal topological size of 10 nm is performed. The simulation results show that the simplest MMOS operated at supply voltage of 0.6 V and below, has a voltage gain higher than 10, is functional gigahertz range. It is demonstrated ability to perform on MMOS complex logic functions.
 the MOSFET, MMOS transistor, logic gate, modeling.
Library reference
 Rakitin V.V. Nanometer merged MOS devices modeling // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2012. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2012. P. 193-198.
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