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The single event transient simulation of the two-phase CMOS inverters for sub-100-nm standards

Authors
 Katunin Yu.V.
 Stenin V.Ya.
Date of publication
 2012

Abstract
 This paper presents sensitivity characteristics of two-phase CMOS inverters at 90-, 65- and 45-nm processes. The impact of a single nuclear particle was simulated by a current pulse with rise time constant of 10 ps and fall time constant of 30 ps. It also defines the allowable capacitive coupling values for outputs (inputs) of differential pieces of two-phase CMOS logic elements depending on the design rules. Critical charges for two-phase inverters are more than 10 times higher than those for conventional CMOS inverters with the same design rules.
Keywords
 two-phase CMOS inverter; local current pulse; critical charge; design rule
Library reference
 Katunin Yu.V., Stenin V.Ya. The single event transient simulation of the two-phase CMOS inverters for sub-100-nm standards // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2012. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2012. P. 427-430.
URL of paper
 http://www.mes-conference.ru/data/year2012/pdf/D35.pdf

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