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Autonomous parameters of of transistors of uncommited logic array ABMK_1_3 in radiation and temperature influences

Authors
 Prokopenko N.N.
 Budyakov P.S.
 Serebryakov A.I.
Date of publication
 2012

Abstract
 Investigated mode, radiation and temperature dependence of the autonomous parameters of transistors of uncommitted logic array ABMK_1_3. Given approximating functions that allow quantify the influence of external factors on zero level and his drift of analog circuits. Show the direction of practical use of models of transistors at synthesis precision differential stages.
Keywords
 analog circuits, theory of autonomous multiterminal network, radiation and temperature impacts, models of transistors, high-precision differential amplifiers
Library reference
 Prokopenko N.N., Budyakov P.S., Serebryakov A.I. Autonomous parameters of of transistors of uncommited logic array ABMK_1_3 in radiation and temperature influences // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2012. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2012. P. 294-297.
URL of paper
 http://www.mes-conference.ru/data/year2012/pdf/D72.pdf

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