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Automated Picosecond Laser Facility for Single Event Effects Simulation in Microelectronic Devices under Space Environment

Authors
 Egorov A.N.
 Mavritskiy O.B.
 Chumakov A.I.
 Pechenkin A.A.
 Koltsov D.O.
Date of publication
 2012

Abstract
 Main technical characteristics of automated local radiation effects simulation facility based on wavelength tunable solid state picosecond laser are presented. Its design features, capabilities and advantages aimed on simulation of single event effects under space environment in modern Si, GaAs, SiGe etc. microelectronic devices are discussed.
Keywords
 single heavy ion; single event effect; radiation hardness; picosecond laser; focused laser radiation
Library reference
 Egorov A.N., Mavritskiy O.B., Chumakov A.I., Pechenkin A.A., Koltsov D.O. Automated Picosecond Laser Facility for Single Event Effects Simulation in Microelectronic Devices under Space Environment // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2012. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2012. P. 604-607.
URL of paper
 http://www.mes-conference.ru/data/year2012/pdf/D124.pdf

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