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Single Event Latchup and Catastrophic Failure in CMOS Devices Investigation and Prevention Methods

Authors
 Tararaksin A.S.
 Nigmatullin R.R.
 Savchenkov D.V.
 Solovyov S.A.
 Yanenko A.V.
Date of publication
 2012

Abstract
 Peculiarities of SEL and catastrophic failure evolution in CMOS integrated circuits due to heavy ion exposure are discussed. Experimental data on integrated circuit behavior during SEL and catastrophic failure is needed to select correct methods of SEL clearing and catastrophic failure prevention. Test methods utilizing laser simulators are the most convenient and informative for these purposes.
Keywords
 single event effects, heavy ions, single event latchup, catastrophic failure, local laser irradiation method
Library reference
 Tararaksin A.S., Nigmatullin R.R., Savchenkov D.V., Solovyov S.A., Yanenko A.V. Single Event Latchup and Catastrophic Failure in CMOS Devices Investigation and Prevention Methods // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2012. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2012. P. 628-633.
URL of paper
 http://www.mes-conference.ru/data/year2012/pdf/D156.pdf

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