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Influence of CMOS Hall Effect Sensor Layout on its Magnetic Sensitivity

Authors
 Chaplygin Yu.A.
 Krupkina T.Yu.
 Krasukov A.Yu.
 Artamonova Ye.A.
Date of publication
 2014

Abstract
 We investigate the possibility of improvement of CMOS Hall Effect Magnetic Sensor Sensitivity by changing the device active region layout. Compared with traditional rectangular shape hall effect sensor, the proposed design can improve the current-related sensitivity from 236 to 1500 V/(A*T).
Keywords
 Hall effect sensor, magnetic sensitivity, CMOS
Library reference
 Chaplygin Yu.A., Krupkina T.Yu., Krasukov A.Yu., Artamonova Ye.A. Influence of CMOS Hall Effect Sensor Layout on its Magnetic Sensitivity // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 2. P. 179-184.
URL of paper
 http://www.mes-conference.ru/data/year2014/pdf/D007.pdf

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