Home         Authors   Papers   Year of conference   Themes   Organizations        To MES conference

Electrostatic protection of BiCMOS IC's

Authors
 Chaplygin Yu.A.
 Timoshenkov V.P.
 Shevyakov V.I.
 Adamov Yu.F.
Date of publication
 2014

Abstract
 Electrostatic protection of BiCMOS ICs is studied. Types of ESD damage are analyzed. Schematics of electrostatic protection devices for high frequency BiCMOS ICs is proposed.
Keywords
 heterojunction bipolar transistor (HBT), silicon-germanium, BiCMOS, electrostatic protection
Library reference
 Chaplygin Yu.A., Timoshenkov V.P., Shevyakov V.I., Adamov Yu.F. Electrostatic protection of BiCMOS IC's // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part3. P. 99-104.
URL of paper
 http://www.mes-conference.ru/data/year2014/pdf/D019.pdf

Copyright © 2009-2018 IPPM RAS. All Rights Reserved.

Design of site: IPPM RAS