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Electrostatic protection of BiCMOS IC's

 Chaplygin Yu.A.
 Timoshenkov V.P.
 Shevyakov V.I.
 Adamov Yu.F.
Date of publication

 Electrostatic protection of BiCMOS ICs is studied. Types of ESD damage are analyzed. Schematics of electrostatic protection devices for high frequency BiCMOS ICs is proposed.
 heterojunction bipolar transistor (HBT), silicon-germanium, BiCMOS, electrostatic protection
Library reference
 Chaplygin Yu.A., Timoshenkov V.P., Shevyakov V.I., Adamov Yu.F. Electrostatic protection of BiCMOS IC's // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 3. P. 99-104.
URL of paper

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