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Development and modeling for submicron PDCFET transistors

Authors
 Krasnyuk A.A.
 Orlov O.M.
 Imametdinov A.
 Maryina E.
Date of publication
 2014

Abstract
 A model is proposed for the characterization of submicron FETs with periodically doped channel - PDCFET. Performance improvement by changing the relation between the lengths of heavily and lightly doped channel parts is possible.
Keywords
 MOS FET transistors, periodically doped channel, TCAD - modeling, self-formation phenomenon of nanostructures.
Library reference
 Krasnyuk A.A., Orlov O.M., Imametdinov A., Maryina E. Development and modeling for submicron PDCFET transistors // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 2. P. 155-158.
URL of paper
 http://www.mes-conference.ru/data/year2014/pdf/D024.pdf

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