Home         Authors   Papers   Year of conference   Themes   Organizations        To MES conference

Research and development of structures for the extraction of circuit model parameters accounting dose radiation effects in submicron VLSI

Authors
 Titov A.I.
 Shelepin N.A.
 Seletskiy A.V.
Date of publication
 2014

Abstract
 In this paper is reseached problems of circuit simulation of radiation effects presented in submicron VLSI.Presented the development of a minimum set of test structures for the extraction of radiation-dependent parameters of CMOS transistors fabricated on bulk silicon technology.
Keywords
 CMOS, cosmic radiation, radiation hardening
Library reference
 Titov A.I., Shelepin N.A., Seletskiy A.V. Research and development of structures for the extraction of circuit model parameters accounting dose radiation effects in submicron VLSI // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 3. P. 149-154.
URL of paper
 http://www.mes-conference.ru/data/year2014/pdf/D045.pdf

Copyright © 2009-2019 IPPM RAS. All Rights Reserved.

Design of site: IPPM RAS