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 Balashov E.V.
 Korotkov A.S.
Date of publication

 This paper presents a UWB balun-LNA. The novel amplifier architecture is used to increase the bandwidth of the amplifier. The key point of the amplifier is the source degeneration with resistive shunt series feedback. The load circuit of the first stage based on combined parallel-series resonance circuit. The active balun is used as a second stage of the amplifier. Amplifier chip is manufactured using CMOS UMC 180 nm. The efficiency of the amplifier is experimentally verified. Voltage gain of the amplifier is 9.7 dB , the reflection coefficient is less than –10 dB , the bandwidth takes band from 2.5 GHz to 7.5 GHz . Noise figure is in the range of 5.4 dB to 7. The first stage of the amplifier consumes 4.2 mA from a 1.8 V voltage source , the second – 12 mA.
 CMOS, LNA, active balun, UWB
Library reference
 Balashov E.V., Korotkov A.S. UWB Balun-LNA // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 3. P. 47-52.
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