Home         Authors   Papers   Year of conference   Themes   Organizations        To MES conference

Radiation-hardned CMOS VLSI SRAM in bulk technology

 Gerasimov Yu.M.
 Grigoryev N.G.
 Goussev V.V.
 Kobylyatskiy A.V.
 Petrichkovich Ya.Ya.
Date of publication

 Architectural, schematic and constructive layout RHBD methods, applied in a bulk 250…90-nm CMOS VLSI RAM and IP-blocks, were analyzed. It was shown that radiation-tolerant bulk RAM for space applications has the same or even best parameters of tolerance in comparison with SOI technology, moreover, process ability, cost and operating speed of such RAM is higher.
The results were obtained from the design and research of a bulk 250…130-nm CMOS RAM 4 Mbit and 16 Mbit and IP-blocks.
Library reference
 Gerasimov Yu.M., Grigoryev N.G., Goussev V.V., Kobylyatskiy A.V., Petrichkovich Ya.Ya. Radiation-hardned CMOS VLSI SRAM in bulk technology // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part III. P. 171-176.
URL of paper

Copyright © 2009-2018 IPPM RAS. All Rights Reserved.

Design of site: IPPM RAS