Home         Authors   Papers   Year of conference   Themes   Organizations        To MES conference

Methods of implementation of high-speed serial channels CMOS transceivers on a physical level

Authors
 Gerasimov Yu.M.
 Domozhakov D.A.
 Kondratenko S.V.
 Lomakin S.
 Solokhina T.V.
Date of publication
 2014

Abstract
 A classification of the physical layer interfaces for the serial channels CMOS transceivers is presented, encompasses many possible implementations of the physical layer devices , including LVDS, CML, VML and others interfaces. The preliminary design for 180nm CMOS process performed and calculation of the basic characteristics of typical circuits of CML- and VML- drivers and some of their species. It is shown that widely represented line produced low-voltage high-speed devices based on physical layer LVDS, VML and CML interfaces can be successfully complemented driver with nVML or pVML interface, output stages which are made on transistors with one type of conductivity. The problem of drivers` output capability objective characterization with common inductive and capacitive parasitics has been formulated and it has also been shown that the slew rate of drivers` differential signal could be used as a criterion.
Keywords
 interface, physical layer, LVDS, CML, VML, matching, BER
Library reference
 Gerasimov Yu.M., Domozhakov D.A., Kondratenko S.V., Lomakin S., Solokhina T.V. Methods of implementation of high-speed serial channels CMOS transceivers on a physical level // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part3. P. 71-76.
URL of paper
 http://www.mes-conference.ru/data/year2014/pdf/D091.pdf

Copyright © 2009-2018 IPPM RAS. All Rights Reserved.

Design of site: IPPM RAS