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Femtosecond Laser System for VLSI Heavy Ion Induced Single Event Effects Hardness Testing

Authors
 Mavritskiy O.B.
 Egorov A.N.
 Pechenkin A.A.
 Savchenkov D.V.
 Telets V.A.
Date of publication
 2014

Abstract
 The characteristics of a unique facility based on femtosecond laser with variable pulse duration for Single Event Effects testing of microelectronic devices are presented. The influence of laser pulse duration on the results of the threshold energy estimation ​​is experimentally confirmed.
Keywords
 femtosecond laser; Single Event Effects; pulse duration
Library reference
 Mavritskiy O.B., Egorov A.N., Pechenkin A.A., Savchenkov D.V., Telets V.A. Femtosecond Laser System for VLSI Heavy Ion Induced Single Event Effects Hardness Testing // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part 3. P. 177-180.
URL of paper
 http://www.mes-conference.ru/data/year2014/pdf/D097.pdf

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