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Calibration of numerical TCAD model for 180 nm SOI MOSFETs

Authors
 Artamonova Ye.A.
 Klyuchnikov A.S.
 Krasukov A.Yu.
 Krupkina T.Yu.
 Shelepin N.A.
Date of publication
 2014

Abstract
 The paper present the results of calibration of the numerical TCAD model for 180 nm SOI MOSFETs.
Parameters of the numerical model had been adapted to fit the experimental capacitance-voltage characteristics and current-voltage characteristics of the transistors
Keywords
 MOS structure, numerical simulation, Silicon-On-Insulator, SOI, TCAD
Library reference
 Artamonova Ye.A., Klyuchnikov A.S., Krasukov A.Yu., Krupkina T.Yu., Shelepin N.A. Calibration of numerical TCAD model for 180 nm SOI MOSFETs // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2014. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2014. Part2. P. 151-154.
URL of paper
 http://www.mes-conference.ru/data/year2014/pdf/D160.pdf

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