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Physical and Topological Simulation of Photodetectors for AIIIBV Integrated Optical Commutation Systems Taking into Account Dependence of Charge Carriers Mobilities on Electric Field  

Authors
 Pisarenko I.V.
 Ryndin E.A.
Date of publication
 2016

Abstract
 In this paper we consider the problem of research and development of the high-speed semiconductor photodetectors. They are designed for the operation as parts of integrated optical commutation systems together with the lasers-modulators based on AIIIBV nanoheterostructures. We have developed physical and topological diffusion-drift models, modelling methods, and applied software for the research of transient processes in GaAs p-i-n structures and Schottky-barrier photodiodes of on-chip optical commutation systems. The dependence of charge carriers mobilities on the electric field intensity has been taken into account for the improvement of adequacy and accuracy of simulation results in this work. This dependence is determined by the effects of intervalley transition of electrons and saturation of charge carriers drift velocities in GaAs. We have obtained the results of the simulation of optical transient processes caused by the illumination of photodetectors structures by subpicosecond laser pulses. According to these results, the influence of considered physical effects on the performance of integrated AIIIBV photodetectors is significant and it should be taken into account during the simulation of such devices.
Keywords
 integrated optical commutation systems, high-speed integrated photodetectors, numerical physical and topological simulation, diffusion-drift system of equations, the dependence of charge carriers mobilities in GaAs on electric field.
Library reference
 Pisarenko I.V., Ryndin E.A. Physical and Topological Simulation of Photodetectors for AIIIBV Integrated Optical Commutation Systems Taking into Account Dependence of Charge Carriers Mobilities on Electric Field // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2016. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2016. Part 4. P. 16-23.
URL of paper
 http://www.mes-conference.ru/data/year2016/pdf/D062.pdf

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