Authors Papers Year of conference Themes Organizations To MES conference
|Methodologies problems of the processes CAD to design electronic component basis of the special purpose for radiation resistance evaluation
| ||Lavlinskiy V.V.|
| ||Savchenko A.L.|
|Date of publication|
| ||In given article is considered general methodological views and problems to design electronic component basis of the special purpose for radiation resistance evaluation. Also in this article is considered the possibilities of their decision based 3D model methods and syntheses to virtual reality methods.|
There are main problems to methodologies of the processes CAD:
difficulty 3D model of the electronic component basis in CAD with account of the reproduction physical and chemical processes at lattice level of the material for separate element;
difficulty 3D model of the electronic component basis in CAD because of multidimensional solved problems that requires the methods of the reduction to such dimensionality at problem decision;
the difficulty of the reproducing the physical phenomenas in the manner of influence cosmic rays, including heavy nucleus particles. There is a need to join theoretical factors from different branches of knowledges;
the difficulty choice of the 3D model optimum facilities for the reason interfacing with existing CAD;
employment different level of electronic component basis topologies;
employment different technology for fabrication of the microchips;
employment new material with new parameters which influence upon final result.
Theoretical factors for designed object electronic component basis based on syntheses to virtual reality are an analysis of the methods information 3D technology as well its are based on the metods, algorithms and models to simulate effects of the physical processes of the heavy nuclear particles.
There are many reasons of the creation to methodologies. For example:
Natural experiment is over specified and expensive;
Natural experiment has significant expenses of time.
The number of natural experiment is limited.
Checking the schemes is realized apart for each type of the radiation exposure.
Natural installations have a smaller power than power cosmic rays.
Mathematical models, describing processes influence heavy nucleus particles, are difficult.
Electronic component basis and its elements have multiplicity of the structures.
There is needed to take into account structure at lattice level of the material.
Physical and technological processes must be taken into account.
Different types of the heavy nucleus particles must be taken into account in physical process to influence on elements of the structure.
Radiation resistance of the microchips must be forecasted for different type influence on early stages of the designing electronic component basis of the special purpose.
Influence processes of the heavy nucleus particles must be introduced on base of the syntheses to virtual reality in the manner of 3D models.
Structural damages from influence of the heavy nucleus particles must be taken into account.
Information 3D technologies must be used in methods, algorithms and models of the designing with account external influences.
Thus sizes element and their main material are defined to develop structured-topological schemes. Structured-topological schemes form crystal lattices with account atomic radius of chemical elements, lattice spacing, atomic number, atomic mass, period, cell structure, nuclear radius, state.
In relation to this work we must conclude that we need a definition:
types of radiation and physical processes of the impacts that occur when these radiations;
types of interaction depending on the conditions of use of electronic components;
effects, inherent to the devices based on semiconductors;
Features methods for the synthesis of virtual reality also determine the need in taking into account the manufacture technology of submicron integrated circuits, theoretical approaches in the description of interaction processes at different levels of detail of the CAD components for assessment of radiation-resistant electronic component basis, which should be based on existing methods and approaches of this assessment.
The proposed algorithm is the analysis for further synthesis of CAD components.
Thus, it is advisable to determine the elements of 3D modeling virtual reality objects with reference to evaluation of radiation resistance of electronic component basis.
Thus, we can conclude the following:
for the synthesis of virtual reality for the purpose of formation processes of radiation required level of protons, neutrons and heavier nuclear particles (including their properties in accordance with the parameters of the chemical elements of the periodic system D. I. Mendeleyev);
based on the basic structures of submicron integrated circuits and their main elements, for further description of interactions, it is advisable to create a model at the level of synthesis of structures of the crystal lattices of the materials for the design of electronic components;
further the interaction between different lattice types in the form of 3D models for items of electronic components (various kinds of transistors, etc.) during the synthesis of virtual reality it is necessary to combine the principle for the crystal lattices formation of submicron elements MOSFETs integrated circuits with scalable models at the level of process materials.
Therefore, these stages should pay attention to the technological requirements of «Quality Assurance in the development process» and «Technical requirements for technological process», where you can define the parameters of the individual elements of electronic component basis;
further interaction between the elements when combining them based on the pairing in the 3D models;
modeling the effects of different zoom levels with 3D elements based on the factors for volumetric and local ionization effects (dose rate), for surface (dose) of radiation effects, the effects of displacement (structural damage);
to build the model of estimation of radiation resistance of electronic components for special purposes should be considered «Requirements resistance to radiation impacts», «Methods of conformity assessment of radiation impacts», «Methods of testing circuits for radiation resistance».
| ||methodology, system CAD, electronic component basis, radiation resistence.|
| ||Lavlinskiy V.V., Savchenko A.L. Methodologies problems of the processes CAD to design electronic component basis of the special purpose for radiation resistance evaluation // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2016. Proceedings / edited by A. Stempkovsky, Moscow, IPPM RAS, 2016. Part 4. P. 190-197.|
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