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Radiation Resistance of MEMS Sensors and Methods of Its Estimation  

Authors
 Vlasov A.I.
 Mileshin S.
 Tsivinskaya T.A.
 Shakhnov V.A.
Date of publication
 2018
DOI
 10.31114/2078-7707-2018-4-190-196

Abstract
 The article is devoted to the analysis of radiation stability features of MEMS sensors based on single-crystal silicon as a structural material of MEMS sensitive elements. The main attention is paid to the method of estimating the parameters of radiation resistance. The analysis of the influence of radiation on MEMS sensors is given. A comparative analysis of the radiation resistance of a serial accelerometer and a custom-made MEMS sensor is given. The construction of an accelerometer capable of withstanding cosmic radiation for long-range expeditions is given.
Keywords
 monocrystalline silicon, radiation resistance, radiation, silicon membrane, MEMS sensors
Library reference
 Vlasov A.I., Mileshin S., Tsivinskaya T.A., Shakhnov V.A. Radiation Resistance of MEMS Sensors and Methods of Its Estimation // Problems of Perspective Micro- and Nanoelectronic Systems Development - 2018. Issue 4. P. 190-196.
URL of paper
 http://www.mes-conference.ru/data/year2018/pdf/D007.pdf

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